Resistive switching devices

The controlled bottom–up self-assembly of nanoparticles into higher-order, three-dimensional structures is a promising approach towards high-density integrated, interconnected electronics. Systems featuring memristive resistance switching have applications in nonvolatile memory technology and neuromorphic electronics.

References:

Maximilian Speckbacher, Michael Rinderle, Oliver Bienek, Ian D. Sharp, Alessio Gagliardi, Marc Tornow, Conductive filament distribution in nano-scale electrochemical metallization cells, Nanoscale (2024), https://doi.org/10.1039/D4NR02870H
Peer Kirsch, Julian M. Dlugosch, Takuya Kamiyama, Christian Pfeiffer, Henning Seim, Sebastian Resch, Frank Voges, Itai Lieberman, Abin Nas Nalakath, Yangbiao Liu, Michael Zharnikov, Marc Tornow, Restricting Conformational Space: A New Blueprint for Electrically Switchable Self-Assembled Monolayers, Small (2024) https://doi.org/10.1002/smll.202308072
Julian M. Dlugosch, Henning Seim, Achyut Bora, Takuya Kamiyama, Itai Lieberman, Falk May, Florian Müller-Plathe, Alexei Nefedov, Saurav Prasad, Sebastian Resch, Kai Saller, Christian Seim, Maximilian Speckbacher, Frank Voges, Marc Tornow, and Peer Kirsch, Conductance Switching in Liquid Crystal-Inspired Self-Assembled Monolayer Junctions, ACS Appl. Mater. Interfaces 14, 31044−31053 (2022)
Mahmoud N. Almadhoun, Maximilian Speckbacher, Brian C. Olsen, Erik J. Luber, Sayed Youssef Sayed, Marc Tornow, and Jillian M. Buriak, Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon, Nano Lett. 21, 2666 (2021)
Maximilian Speckbacher, Matthias Jakob, Markus Döblinger, Jonathan G. C. Veinot, Aras Kartouzian, Ueli Heiz, Marc Tornow, Nonvolatile Memristive Switching in Self-assembled Nanoparticle Dimers, ACS Appl. Electron. Mater. 2, 1099 (2020)
M. Speckbacher, M. Rinderle, W. Kaiser, E. A. Osman, D. Chryssikos, A. Cattani-Scholz, J. M. Gibbs, A. Gagliardi, M. Tornow, Directed Assembly of Nanoparticle Threshold Selector Arrays, Adv. Elec. Mat. 5, 1900098 (2019)