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Technische Universität München

Quantum Technology

Left: Internal quality factor for differently fabricated Ta thin-film resonators, as function of RF power and measured at T=100 mK. From: M. Singer et al., 2024 IEEE-QCE, p. 1197 (2024); Copyright IEEE 2024, reprinted with permission. Right: Voltage-current characteristics for different TiN/insulator/TiN junctions: (a) without barrier (continuous TiN film), (b) with native oxide barrier, (c) with a ca. 2 nm AlN barrier, (d) with a ca. 5 nm AlN barrier. Measurements taken at T= 300 mK. From: B. Schoof et al., 2024 IEEE-QCE, p. 1228 (2024); Copyright IEEE 2024, reprinted with permission.

We investigate novel materials, surface and interface methodologies to enhance the performance of superconducting qubit devices. A central current focus is on coplanar waveguide resonator structures and Josephson junctions based on tantalum (Ta) and titanium nitride (TiN).

 

References:

  • Harsh Gupta, Rui Pereira, Leon Koch, Niklas Bruckmoser, Moritz Singer, Benedikt Schoof, Manuel Kompatscher, Stefan Filipp, Marc Tornow, High temporal stability of niobium superconducting resonators by surface passivation with organophosphonate self-assembled monolayers, Communications Materials (2026), https://doi.org/10.1038/s43246-025-01068-8

  • M. Singer, B. Schoof, H. Gupta, D. Zahn, J. Weber and M. Tornow, Tantalum Thin Films Sputtered on Silicon and on Different Seed Layers: Material Characterization and Coplanar Waveguide Resonator Performance, 2024 IEEE International Conference on Quantum Computing and Engineering (QCE), Montreal, QC, Canada, 2024, pp. 1197-1202, doi: 10.1109/QCE60285.2024.00141. 

  • B. Schoof, M. Singer, S. Lang, H. Gupta, D. Zahn, J. Weber, M. Tornow, Development of TiN/AlN-Based Superconducting Qubit Components, 2024 IEEE International Conference on Quantum Computing and Engineering (QCE), Montreal, QC, Canada, 2024, pp. 1228-1232, doi: 10.1109/QCE60285.2024.00145. 

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