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Technische Universität München

Quantum Technology

Left: Internal quality factor for differently fabricated Ta thin-film resonators, as function of RF power and measured at T=100 mK. From: M. Singer et al., 2024 IEEE-QCE, p. 1197 (2024); Copyright IEEE 2024, reprinted with permission. Right: Voltage-current characteristics for different TiN/insulator/TiN junctions: (a) without barrier (continuous TiN film), (b) with native oxide barrier, (c) with a ca. 2 nm AlN barrier, (d) with a ca. 5 nm AlN barrier. Measurements taken at T= 300 mK. From: B. Schoof et al., 2024 IEEE-QCE, p. 1228 (2024); Copyright IEEE 2024, reprinted with permission.

We investigate novel materials, surface and interface methodologies to enhance the performance of superconducting qubit devices. A central current focus is on coplanar waveguide resonator structures and Josephson junctions based on tantalum (Ta) and titanium nitride (TiN).

 

References:

  • M. Singer, B. Schoof, H. Gupta, D. Zahn, J. Weber and M. Tornow, Tantalum Thin Films Sputtered on Silicon and on Different Seed Layers: Material Characterization and Coplanar Waveguide Resonator Performance, 2024 IEEE International Conference on Quantum Computing and Engineering (QCE), Montreal, QC, Canada, 2024, pp. 1197-1202, doi: 10.1109/QCE60285.2024.00141. 

  • B. Schoof, M. Singer, S. Lang, H. Gupta, D. Zahn, J. Weber, M. Tornow, Development of TiN/AlN-Based Superconducting Qubit Components, 2024 IEEE International Conference on Quantum Computing and Engineering (QCE), Montreal, QC, Canada, 2024, pp. 1228-1232, doi: 10.1109/QCE60285.2024.00145. 

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